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| MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE CM150RL-12NF IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 11 7 13.62 40.78 12 35 12 A B U V W B (13.5) 32 12 6-M5 NUTS 10.75 (19.75) 12 22 23 12 23 12 23 12 (SCREWING DEPTH) 11.75 55 1 1 1 1 8 P 22 -0.5 16 23.2 +1 3 WP VP LABEL 120 106 0.5 17 17 2-5.5 MOUNTING HOLES UP CN N Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 B CN-7 CN-8 N CN-5 CN-6 U CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation G-E Short C-E Short DC, TC = 93C*1 Pulse Pulse TC = 25C Conditions Ratings 600 20 150 300 150 300 730 Unit V V A A A A W (Note 2) (Note 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, TC = 102C*1 Pulse TC = 25C Clamp diode part Clamp diode part Conditions Ratings 600 20 75 150 430 600 75 Unit V V A A W V A (Note 2) (COMMON RATING) Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Ratings -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 Unit C C Vrms N*m N*m g Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Feb. 2009 2 MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE = 15V RG = 4.2, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 Tj = 25C Tj = 125C Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.2 Limits Typ. -- 7 -- 1.7 1.7 -- -- -- 600 -- -- -- -- -- 2.5 -- -- -- 0.085 -- Max. 1 8 0.5 2.2 -- 23 2.8 0.9 -- 120 100 300 300 150 -- 2.8 0.17 0.31 -- 42 Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V IF = 75A IGBT part*1 Clamp diode part*1 Tj = 25C Tj = 125C Min. -- 6 -- -- -- -- -- -- -- -- -- -- 8.3 Limits Typ. -- 7 -- 1.7 1.7 -- -- -- 300 -- -- -- -- Max. 1 8 0.5 2.2 -- 11.3 1.4 0.45 -- 2.8 0.29 0.51 83 Unit mA V A V nF nF nF nC V K/W K/W *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 3 MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 250 200 150 100 VGE = 20V 4 15 13 Tj = 25C 12 VGE = 15V 3 11 2 10 50 0 8 0 2 4 6 8 9 10 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 250 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 150A IC = 300A 2 IC = 60A 0 6 8 10 12 14 16 18 20 Tj = 25C Tj = 125C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Cies SWITCHING TIME (ns) 3 2 tf td(off) 101 7 5 3 2 102 7 5 td(on) tr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 103 Coes Cres 100 7 5 3 2 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 Irr trr 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive load 23 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.17K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.31K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Conditions: VCC = 300V VGE = 15V 3 IC = 150A Tj = 125C 2 Inductive load C snubber at bus 101 Esw(off) 7 7 5 5 3 2 102 Esw(off) SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 Esw(on) 100 7 5 3 2 10-1 1 10 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 Esw(on) 2 3 5 7 101 2 3 5 7 102 100 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) 101 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 Err Conditions: VCC = 300V VGE = 15V IE = 150A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 100 7 5 3 2 100 7 5 3 2 10-1 1 10 10-1 0 10 EMITTER CURRENT IE (A) GATE RESISTANCE RG () Feb. 2009 5 MITSUBISHI IGBT MODULES CM150RL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 6 |
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